Inductive load driver slew rate controller

ABSTRACT

A circuit and method for digital controlling the slew rate of load voltage are provided. The circuit is comprised of a digital slew-rate control unit that utilizes a feedback signal to generate control signals where the feedback signal indicates the observed rate of voltage change on the load. The circuit is further comprised of a load driver circuit that is operated by the control signals and provides a slew-rate controlled output voltage used to operate a load switch, where the load switch provides power to the load. The circuit is configured to operate the load switch using a slew-rate controlling driver, depending on the state of the load switch transition, and a non-controlling driver.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. patent application Ser. No.14/200,266 filed on Mar. 7, 2014, which claims the benefit of U.S.Provisional Application No. 61/775,523, filed on Mar. 9, 2013, which isincorporated herein in its entirety.

TECHNICAL FIELD

The present disclosure relates to a slew-rate controller for a loaddriver circuit; in particular, to a driver circuit for providing powerto inductive loads, such as a motor or a switched-mode power supplies(SMPS).

BACKGROUND

A variety of modern electronics utilize load switches to control thedelivery of power to loads that draw current from the available powersupply, such as a motor or SMPS. Load driver circuits are used to exertcontrol over a load switch. In addition to determining when the loadswitch provides power to a load, a load driver circuit may also controlthe rate at which properties of the load are changed. The rate at whichthese properties change is often referred to as a slew rate. Loadswitches are commonly implemented using MOSFETs, which provide precisecontrol over the delivery of power to a load and over slew rates, suchas the change in voltage on a phase node of a motor or the voltage dropon the inductance of an SMPS.

Once a determination has been made to switch power to a load, a loaddriver circuit is typically configured to power the load as quickly aspossible. This maximizes efficiency in terms of minimizing the latencyin powering the load, such that the component being powered can performits intended function. However, practical limits exist on how quickly aload can be powered by a load driver circuit.

Many types of current loads (for instance, electric motors) are sourcesof impedance. The impedance of these loads cause problematic sideeffects that result from powering them. For example, in the case of aload that is a motor, the load current path is switched between beingdriven by a high-side and low-side driver, which results in the currentpath switching between supply and ground paths. This switching causesthe voltage on the load to change quickly, which results in a kickbackcharge flowing back to the load switch. This kickback voltage cantraverse the load switch, and can result in the unintended switching ofthe opposite load switch. This, in turn, has consequences ranging fromreduced efficiency in benign cases to damage to the load driver circuitand/or the load switch.

In addition to kickback, powering a current load can result inelectromagnetic interference (EMI) being generated. One particularlyrelevant source of EMI is the electromagnetic force that results fromrapidly powering an inductive load, such as a motor or from the rapidlychanging current in the supply and ground wires. The greater the rate ofchange of voltage powering the load, the greater the magnitude of theinduced magnetic field, and the greater the levels of resulting EMI.Even modest amounts of EMI can result in spurious currents in the systemthat can cause malfunctions in neighboring circuitry and potentiallyeven damage neighboring circuits.

Fast current changes through the switches will generate large voltagespikes due to the parasitic inductance on the current path. These largespikes can exceed switch and driver circuit safe operating limits anddamage parts.

In general, these problems caused by the application of power to a loadcan be ameliorated by slowing the rate at which the voltage on the loadchanges. Moderating the rate at which voltage on the load changesresults in a decrease in kickback and the generation of EMI.

Changing the voltage on a load more slowly can at least partiallyalleviate some of these problems, but it introduces an undesirableinefficiency into the system. By delaying the time required to reach thesupply voltage (or ground, depending on whether the load is beingswitched on or off), this introduces a latency in the response time ofthe load. Any such delays accumulate over time and cause unacceptableinefficiencies that ripple throughout the system. Thus, it is desirableto apply a voltage to a load, such as a motor, at a rate that minimizesthe latency in the response time for the load, yet does not produceundesirable levels of kickback current and EMI.

SUMMARY

Conventional driver circuits provide inadequate slew-rate control due totheir dependence on environmental properties, and they are open-loopsolutions that do not take into account observations of the value beingcontrolled. Hence, there is a need for a closed-loop solution thatprovides more accurate and reliable control of slew rates. These andother drawbacks in the prior art are overcome in large part by a systemand method according to embodiments of the present invention.

According to an embodiment, an integrated circuit is provided fordriving a first load switch, wherein the first load switch powers aninductive load, the integrated circuit comprising: a first digitalslew-rate control unit for generating control signals, wherein the firstdigital slew-rate control unit generates the control signals based on afeedback signal that indicates the rate of voltage change on the load;and a first load driver circuit operated by the control signals whereinthe first load driver circuit generates a slew-rate controlled outputvoltage that operates the first load switch.

According to further embodiments the first load switch is a MOSFET.According to further embodiments, the integrated circuit is a slew-ratecontrol driver; and the integrated circuit further comprises anon-control driver that generates a constant output, wherein the loadswitch is operated by the non-control driver and the slew-rate controldriver, and wherein the slew-rate control driver generates a constantoutput during steady states of the load switch, and wherein theslew-rate control driver is modulated to generate a slew-rate controlledoutput during state transitions of the load switch. According to furtherembodiments, the slew-rate controlled driver is a large low-impedancedriver, and the non-control driver is a small current limited driver.According to further embodiments, the integrated circuit is a low-sidedriver and the first load switch is a low-side load switch, and theintegrated circuit further comprises: a second digital slew-rate controlunit for generating high-side control signals, wherein the seconddigital slew-rate control unit generates the control signals based onthe feedback signal that indicates the rate of voltage change on theload; and a second load driver circuit operated by the high-side controlsignals, wherein the second load driver circuit generates a slew-ratecontrolled output voltage that operates the second load switch, whereinthe second load driver circuit and the second digital slew-rate controlunit comprise a high-side driver. According to further embodiments, thefirst digital slew-rate control unit comprises a capacitor that receivesthe feedback signal; and a resistor coupled with the capacitor thatdefines the slew rate. According to further embodiments, the firstdigital slew-rate control unit further comprises: a NAND gate having afirst input receiving the feedback signal and a second input receivingan input voltage signal, wherein the output of the NAND gate controls ap-channel field-effect transistor of the first load driver circuit; anda NOR gate having a first input receiving the feedback signal and asecond input receiving the input voltage signal, wherein the output ofthe NOR gate controls an n-channel field-effect transistor of the firstload driver circuit.

BRIEF DESCRIPTION OF THE DRAWINGS

The present invention may be better understood, and its numerousobjects, features, and advantages made apparent to those skilled in theart, by referencing the accompanying drawings. The use of the samereference symbols in different drawings indicates similar or identicalitems.

FIG. 1 shows a load drive circuit implementing conventional slew-ratecontrol.

FIG. 2 shows timing of a conventional slew-rate control when turning onthe MOSFET.

FIG. 3 shows timing of a conventional slew-rate control when turning offthe MOSFET.

FIG. 4 shows another conventional load drive circuit implementingslew-rate control.

FIG. 5 shows a high-level depiction of a load drive circuit implementingslew-rate control according to an embodiment.

FIG. 6 shows a load drive circuit implementing slew-rate controlaccording to an embodiment.

FIG. 7 shows a timing diagram generated using an embodiment.

FIG. 8 depicts an embodiment with dual MOSFET load switches controllingpower from high-side and low-side drivers.

DETAILED DESCRIPTION

FIG. 1 illustrates conventional slew-rate control of a load drivercircuit using a resistor R_(GATE) in series between the load drivercircuit and the load switch. The use of a series resistor in this mannerserves to moderate the rate at which the voltage on the load, V_(DS), ischanged, which reduces the amount of EMI and mitigates the kickbackgenerated by rapid changes in the output voltage used to drive thecurrent load. The use of a series resistor for moderating the slew rateof a load switch provides inadequate control over the rate at change ofthe voltage on the load because the resistor's behavior varies accordingto the operating temperature of the system and because the resistorfails to account for tolerance variations in the load switch—which canbe significant when transistor load switches such as MOSFETs are used—orthe actual current drawn by the load. Furthermore, conventional,resistor-based slew-rate control is an open-loop solution that must bedesigned based on predictions of the circuit's behavior and is unable toaccount for actual operational characteristics of the circuit.

The series resistor used to limit the slew rate makes the switches moresusceptible to kickback and results in the need for conventionalkickback prevention circuits, such as that depicted in FIG. 1. Theyutilize a bipolar transistor Q_(OFF) that is switched to an on state inorder to provide a low impedance pathway by which to discharge akickback voltage. The low impedance path provided by the bipolartransistor, Q_(OFF), allows the kickback current to be sunk, whilekeeping the kickback charge from reaching the gate terminal of the loadswitch. An additional diode is required to turn on the bipolartransistor and create the charging path to the load switch gate. Thisconventional circuitry for kickback prevention is undesirable, as itadds manufacturing cost and space requirements. These disadvantagescould be avoided by a load driver that is capable of delivering power ina manner that reduces kickback and has low enough output impedance tosink the remaining kickback current.

FIGS. 2 and 3 provide a more detailed view of a conventional load drivercircuit that utilizes a series resistor to moderate the slew rate of aMOSFET load switch. FIGS. 2 and 3 are excerpted from Design andApplication Guide for High Speed MOSFET Gate Drive Circuits, LaszloBalogh, Unitrode Power Supply Seminar (2001), which describes aconventional load driver circuit. At the top of FIG. 2, a circuitdiagram for conventional slew-rate control using a series resistorR_(GATE) is depicted. The timing diagram at the bottom of FIG. 2 showsthe changes to various MOSFET parameters when the MOSFET is beingswitched to an on state.

Period 1 of the timing diagram of FIG. 2 is known as the turn-on delayand represents the time that is required to raise the gate voltage,V_(GS), from the off-state drive voltage to the threshold voltage,V_(TH), at which the MOSFET begins to switch to an on state. Theduration of period 1 is a function of the MOSFET's internal capacitance.The initial increase in the gate voltage during period 1 results fromthe charging of the MOSFET's internal capacitors. Since every MOSFETwill have some internal capacitance, this turn-on delay represented inperiod 1 cannot be eliminated entirely. However, conventional load drivecircuits that utilize a series resistor, R_(GATE), introduce additionalperiod 1 delay in the time required to load the internal load switchgate capacitor of the MOSFET and raise the gate voltage to the thresholdvoltage. The delay is due to the drop in the input voltage proportionalto the MOSFET's internal capacitors charging current that is caused bythis resistor. During the delay of period 1, the drain current, I_(D),remains at an off level, and the drain voltage, V_(DS), remains in ahigh state, since no charge is being conducted by the MOSFET at thistime.

Period 2 of the timing diagram of FIG. 2 is the period during which thethreshold voltage has been reached and the MOSFET begins to conductcharge. In period 2, the gate voltage is raised further past thethreshold voltage, and the MOSFET begins to conduct a drain current.Thus, during period 2, the drain current goes from on off level to thefull load current. This is the linear portion of the MOSFET's operation,where the drain current is a function of the gate voltage. The fasterthe gate voltage is raised during this interval, the more quickly thedrain current increases. During period 2, the drain voltage remains at ahigh output voltage level because the low-side switch cannot yet sinkthe load current.

During period 3 of the timing diagram of FIG. 2, the drain current hasreached the full, steady-state load current. Consequently, the MOSFETdrain voltage is dropped to its low, on-state level. In the conventionalsystem of FIG. 2, the rate at which the drain voltage is dropped ismoderated by series resistor, R_(GATE), in the gate terminal path.However, this open-loop, series resistor approach provides no capacityby which to adapt changes in gate voltage based on the actual rate ofchange of the drain voltage and, thus, provides inadequate ability tocontrol kickback or EMI. Failure by the series resistor to adequatelyslow the rate of change of the drain voltage results in kickback, whichmay turn on the opposite side load switch of the bridge and consequentlycause large shoot-through currents.

During period 4, the gate voltage of the MOSFET is raised to itson-state, drive voltage. During period 4, the MOSFET semiconductor isfully charged, such that it reaches its lowest resistance. Like period1, the length of period 4 is also undesirably lengthened by the use of aseries resistor.

FIG. 3 illustrates the timing diagram for switching this same MOSFET ofFIG. 2 to an off state. The top of FIG. 3 repeats the previous circuitdiagram of a conventional slew-rate control implementation using aseries resistor R_(GATE).

Period 1 of the timing diagram of FIG. 3 is known as the turn-off delayand represents the time required to drop the gate voltage, V_(GS), fromthe on-state drive voltage to the voltage at which the MOSFET actuallybegins switching to an off state. This delay of period 1 in dropping thegate voltage is a result of the MOSFET's internal capacitance. When theload driver circuit drops the voltage supplied to the gate terminal, therate at which the gate voltage actually drops depends on the time ittakes for the internal capacitance of the MOSFET to discharge. As withthe turn-on delay, the MOSFET's internal capacitance preventseliminating turn-off delay entirely. However, a conventional load drivecircuit that utilizes a series resistor lengthens this turn-on delay bylimiting the current that can flow to discharge the MOSFET gatecapacitor, C_(GS). During the delay of period 1, the drain current,I_(D), remains at the full load current and the drain voltage, V_(DS),remains at its low state.

Period 2 of the timing diagram of FIG. 3 is the counterpart to period 3of the MOSFET turn-on sequence and is the period during which the slewrate of the MOSFET is controlled during its turn-off sequence. Duringperiod 2 of the timing diagram of FIG. 3, the drain voltage, V_(DS), ofthe MOSFET rises to its high, off-state voltage, since the load currentis no longer being drawn. Current now accumulates in the C_(DS)capacitor, which serves to increase the drain voltage. As before,failure by the series resistor to adequately slow the rate of change ofthe drain voltage results in kickback. During period 2, the draincurrent remains at the full load current.

As with the turn-on sequence, the series resistor, R_(GATE), used in theconventional load drive circuit of FIG. 3 again provides only basicmoderation of the rate of change in the drain voltage during period 2 ofthe turn-off sequence. As the input voltage supplied by the load driverto the gate terminal is decreased, the series resistor R_(GATE) resiststhis change by limiting current flow. This, in effect, lengthens theduration of period 2. However, as before, this slew-rate controlprovides only basic, open-loop control of the gate voltage that isdesigned based on worst-case predictions of the circuit's operations,and with no input regarding the actual current at the load, resulting ininefficient switching times. And, as before, spikes and kickback voltagecan still result from rapidly decreasing the gate voltage and draincurrent beyond the serial resistor's designed ability to moderate thischange.

During period 3, the switch gate voltage is further discharged to theswitch threshold, reducing the drain current to zero. During period 4 ofthe timing diagram of FIG. 3, the remaining internal capacitance of theMOSFET is discharged as the gate voltage drops to its low, off-statelevel. During period 4, the drain current and drain voltage are atsteady-state, off levels. Like period 1, the length of periods 3 and 4are also undesirably lengthened by the use of a series resistor.

Provided further below is a comparison of these conventional slew-ratecontrol timing diagrams, depicted in FIGS. 2 and 3, to timing diagramsgenerated using an embodiment of the claimed invention. It illustratesthe additional time delay caused by the use of a series resistor forslew-rate control, and the improvements provided by the invention.

FIG. 4 illustrates a MOSFET load drive circuit according to someembodiments. This load drive circuit is actually formed from twodistinct load drive circuits. One is a large low impedance load drivecircuit in series with a delay component. The second is a small currentlimited driver that is coupled in parallel to the series-connected delayand low-impedance driver. While the MOSFET is switching states, thesmall current limited driver is utilized. Upon a completed statetransition, the parallel large low impedance driver is added. The delaycomponent implements a delay before the large driver is switched on thatis long enough to ensure it turns on only after the transition iscomplete, which corresponds to period 4 in the timing diagrams of FIGS.2 and 3. The large low impedance driver then provides a low impedancepathway by which kickback charge can be sunk without it reaching thegate terminal of the MOSFET. According to some embodiments, the largelow impedance driver is controlled using a digital on/off control thatis regulated by the measured drain voltage of the MOSFET. This allowsturning on the large buffer based on actual measurements that indicatewhen the transition between MOSFET states is complete. In someembodiments, the load switches can be integrated into the load drivercircuit.

In light of the inadequacies of slew-rate control using open-loop,series resistor implementations, effective closed-loop solutions arepreferred. However, the use of analog closed-loop slew-rate controlimplementations has several disadvantages. For example, in some cases,the load switch is a MOSFET that is external to the integrated circuitimplementing the load driver circuit that drives the MOSFET's switchingactions. In such situations, the operational parameters of the MOSFETload switch may be unknown or not known precisely. When the operationalcharacteristics of a MOSFET load switch are not exactly known, attemptsto manipulate the slew rate of such MOSFET using analog controls tomoderate the gate voltage can result in unstable behavior. Consequently,a closed-loop, digital slew-rate control solution is desired.

FIG. 5 depicts a general block diagram of an exemplary embodiment. InFIG. 5, the MOSFET load driver 500 is an integrated circuit comprised ofa high-side load driver 501, which drives a high-side MOSFET 507, and alow-side load driver 502, which drives a low-side MOSFET 506. Each ofthe low-side and high-side drivers is comprised of two main componentsoperating in series: a digital slew-rate control circuit and a loaddriver circuit. The low-side load driver 502 is comprised of a low sideload driver circuit 503 and a low-side digital slew-rate controller 504.The high-side load driver 501 is comprised of a high-side load drivercircuit 509 and a high-side digital slew-rate controller 510. Both thelow-side load driver circuit 503 and the high-side load driver circuit509 perform the conventional task of controlling the switchingoperations of the MOSFET.

Each of the digital slew-rate controllers, described in more detailbelow, receive feedback 508 reflecting the voltage change on theinductive load being driven via a high-side MOSFET 507 and a low-sideMOSFET 506. This feedback input 508 signals the presence of changingvoltages at the load output 505. As described in more detail below, thisfeedback information is utilized to digitally control the slew rate ofthe high-side MOSFET 507 and the low-side MOSFET 506 in a manner thatincreases overall efficiency by applying power to the current load asquickly as possible, while minimizing the amount of voltage spikes,kickback, or EMI that is generated. As described with respect to FIG. 4,certain embodiments utilize a large low impedance driver and a smallcurrent limited driver. Together, these drivers can provide an averageoutput impedance that effectively moderates the rate of change of thegate voltage and, in turn, the drain voltage of the MOSFET. Someembodiments will manage the transitions between the two drivers via adigital slew-rate control module 510 that receives the drain voltagefeedback 508 and uses this information to digitally switch the twoavailable drivers as needed to moderate the slew rate of the drainvoltages of the MOSFET switches to minimize any kickback.

In this dual MOSFET configuration, a current flows between a powersupply, via the high-side MOSFET load switch 507 and the current load505, and between the load 505 and ground via the load-side MOSFET loadswitch 506. In this manner, the high-side and low-side drivers can bealternately activated and deactivated in order to pulse current to acurrent load such as a motor. Embodiments may have multiple pairs ofinteroperating high-side and low-side drivers cooperating to power thecurrent load. Other embodiments may not include both high-side andlow-side drivers and could instead comprise a single driver powering acurrent load. In some embodiments, each pair of high-side and low-sidedrivers is comprised of an n-channel MOSFET load switch used in thelow-side driver and a p-channel MOSFET load switch on the high-sidedriver. Other embodiments may utilize different combinations ofn-channel and p-channel MOSFETs in each pair of high-side and low-sideload switches.

FIG. 6 shows an embodiment of a more detailed depiction of the high-sideload driver 601 and low-side load driver 602. As described with respectto FIG. 5, each of these drivers is comprised of a digital slew-ratecontroller and a load driver circuit. With respect to the low-sidedriver, the load driver circuit is comprised of field-effect transistors626 and 627, and small current limited driver 629, and corresponds toitem 503 of FIG. 5. The low-side digital slew-rate controller, items 504of FIG. 5, is comprised of the remaining components of the low-side loaddriver 602. The digital slew-rate controller and the load driver of thehigh-side driver are similarly formed by the illustrated components ofthe high-side driver 601.

The input signal for the high side driver, V_(IN)(HI) and the inputsignal for the low side driver V_(IN)(LOW) are conventional load driverinputs similar to the inputs observed in FIG. 2 and FIG. 3. With respectto the low side driver 602, the low-side input signal, V_(IN)(LOW),turns on/off the small current limited driver 629 and the large lowimpedance driver. Likewise, the high-side input signal, V_(IN)(HI),turns on/off the two drivers that comprise the high-side driver. Thedigital input signals generated by digital slew-rate controller 504 arebased on the voltage change on the load, in particular the measureddrain voltage of MOSFET 628 and source voltage of MOSFET 615. Thedigital input signals generated by digital slew-rate controller 504 turnoff the large driver when the voltage on the load 630 changes too fastand turns back on the large driver if the voltage changes too slowly. Inthis manner, by turning on/off the large driver at an appropriate rate,they moderate the rate of change of the output voltage on the load 630.

Unlike open-loop slew-rate control mechanisms that make changes to theslew rate of an output signal without any knowledge of the actual valuesof the output signal, the invention utilizes a feedback pathway used toindicate the actual changes in the slew rate of the load voltage 630.This use of feedback allows more precise control of the rate of changeof the load voltage, where the generation of the digital inputs to theload drivers accounts for the actual load. In the embodiment of FIG. 6,the feedback mechanism is implemented using a circuit pathway thatconnects both the high-side and low-side slew-rate controllers to thepathway powering the current load 630. In the embodiment of FIG. 6, thiscircuit pathway provides a shared feedback pathway that is utilized byboth the high-side digital slew-rate controller 601 and the low-sidedigital slew-rate controller 602.

For both the high-side digital slew-rate controller 601 and the low-sidedigital slew-rate controller 602, a capacitor and a resistor are pairedto control the operation of the digital logic gates that comprise theload driver circuit. To determine whether any adjustments will be madeto the slew-rate controlled output signal, the capacitive feedbacksignal is provided as an input to pairs of logical gates in eachslew-rate controller. If this feedback signal surpasses the thresholdfor trigging the input to the logical gate, the gates change states suchthat voltage adjustments result that either increases/decreases orstalls the rate of change in the slew-rate controlled output signal. Theresistors 607, 608, 623, and 625 serve to set the reference slew rate bycharging or discharging the capacitors, such that the voltage on thedigital gates inputs are triggered to switch back in the otherdirection. In this manner, the capacitors and resistors are used todigitally moderate the slew rate of the load voltage based on feedbackindicating the measured load voltage values.

With respect to the high-side digital slew-rate controller 601, one ofthe pair of logical gates used to modify the slew-rate controlled outputsignal is a NAND gate 611. This NAND gate 611 receives a feedback signalvia capacitor 603 as one input and the high-side input voltageV_(IN)(HIGH) as the other input. When V_(IN)(HI) is set high, the largedriver 612 is turned on, since the feedback signal is high due to theresistor 607. When the voltage on 630 rises too fast, the feedbackcapacitor 603 forces the input on 611 below the threshold, which turnsoff 612. This slows down the slew rate on 630. If the slew rate is tooslow, the resistor 607 will discharge capacitor 603, and this will turnon the transistor 612 again, which will increase the slew rate on 630.

The second logical gate in the pair of logical gates present within thehigh-side digital slew-rate controller 601 that is used to modify theslew-rate controlled output signal is a NOR gate 613. This NOR gate 613receives the feedback signal via capacitor 604 as one input and thehigh-side input voltage V_(IN)(HIGH) as the other input. The output ofthe NOR gate 613 is used to control the gate terminal of a field-effecttransistor 614. When V_(IN)(HIGH) is set low, the large driver 614 isturned on, since the feedback signal is low due to the resistor 608.When the voltage on 630 falls too fast, the feedback capacitor 604forces the input on 613 above the threshold, which turns off 614. Thisslows down the slew rate on 630. If the slew rate is too slow, theresistor 608 will discharge capacitor 604, and this will turn on thetransistor 614 again, which will increase the slew rate on 630.

By sizing the capacitors and resistors to select the adequate slew rate,the high-side digital slew-rate controller 601 drives the gate terminalof MOSFET 615, such that damaging amounts of kickback are prevented fromoccurring, yet the gate voltage is increased to its final value asquickly as possible.

This feedback driven mechanism for adjusting the slew rate of the outputsignal of the high-side digital slew-rate controller 601 results in anoutput adjustment that can be considered a type of pulse-widthmodulation (PWM) digital signal. This digital output signal has periodswhere no voltage increases/decreases are made to the gate terminal ofMOSFET 615, mixed with periods where voltage to the gate terminal isincreased/decreased. Rather than making continuous slew-rateadjustments, as in conventional analog systems, this digital slew-ratecontrol mechanism makes discrete slew-rate adjustments The relativedurations of the periods where slew-rate adjustments are made willdictate the rate at which the gate terminal voltage isincreased/decreased, which in turn dictates the rate at which the draincurrent is increased/decreased and current is provided to the load 630.

Working in conjunction with the high-side digital slew-rate controller601, the low-side digital slew-rate controller 602 operates to allowcurrent to flow from the load 630 to ground or from ground to the load.However, as with rapid changes in current flow to a load, allowingcurrent to rapidly flow from the load to ground (or vice versa) canresult in damaging amounts of EMI, especially in situations where theload has significant inductance such as a motor. Thus, the low-sidedigital slew-rate controller 602 operates to control the rate at whichcurrent flows from the load 630 to ground or vice versa. Like thehigh-side digital slew-rate controller 601, the low-side digitalslew-rate controller 602 is comprised of a pair of logical gates thatare configured to interoperate in generating a digital voltageadjustment that either increases/decreases or stalls the rate of changein the slew-rate controlled output signal.

With respect to the low-side digital slew-rate controller 602, one ofthe logical gates used to generate the slew-rate controlled outputsignal is a NAND gate 620. This NAND gate 620 receives a feedback signalvia capacitor 624 as one input and the low-side input voltageV_(IN)(LOW) as the other input. The output of the NAND gate 620 is usedto control the gate terminal of a field-effect transistor 626. When boththe low-side input voltage and the feedback signal are high, the NANDgate 620 output is low, turning on 626. When V_(IN)(LOW) is set high,the large driver 626 is turned on, since the feedback signal is high dueto the resistor 625. When the voltage on 630 falls too fast, thefeedback capacitor 624 forces the input on 620 below the threshold,which turns off 626. This slows down the slew rate on 630. If the slewrate is too slow, the resistor 625 will discharge capacitor 624, andthis will turn on the transistor 626 again, which will increase the slewrate on 630.

The second logical gate in the pair of logical gates present within thelow-side digital slew-rate controller 602 used to modify the slew-ratecontrolled output signal is a NOR gate 621. This NOR gate 621 receivesthe feedback signal via capacitor 622 as one input and the low-sideinput voltage V_(IN)(LOW) as the other input. The output of the NOR gate621 is used to control the gate terminal of a field-effect transistor627. The output of the NOR gate 621 is high only when both the low-sideinput voltage and the feedback signal are low. In this case, the outputof the NOR gate 621 causes the field-effect transistor 627 to be in anon state. In all other cases, the output of the NOR gate 621 is low, andthe field-effect transistor 627 is in an off state. When V_(IN)(LOW) isset low, the large driver 627 is turned on since the feedback signal islow due to the resistor 623. When the voltage on 630 rises too fast, thefeedback capacitor 622 forces the input on 621 above the threshold whichturns off 627. This slows down the slew rate on 630. If the slew rate istoo slow, the resistor 623 will discharge capacitor 622, and this willturn on the transistor 627 again, which will increase the slew rate on630.

By sizing the capacitors and resistors to select the adequate slew rate,the low-side digital slew rate controller 602 drives the gate terminalof MOSFET 628 such that damaging amounts of kickback are prevented fromoccurring, yet increases the gate voltage to its final value as quicklyas possible.

As with the high-side controller, this results in a set of PWM-likedigital outputs that are used to control the slew rate of the outputsignal, with the relative durations of the adjustment periods dictatingthe rate at which the gate terminal voltage is increased/decreased, andthe rate of change of the drain current is increased/decreased.

Based on the operation of the described embodiment, improvements inslew-rate control have been demonstrated. FIG. 7 depicts a timingdiagram generated using an embodiment similar to that depicted in FIG.6. The timing diagram of FIG. 7 illustrates the profiles of gatevoltage, V_(GS), and drain voltage, V_(DS), resulting from switching aMOSFET to an off state. The process by which a MOSFET is switched to anoff state is described above with regard to FIG. 3. In FIG. 7, the gatevoltage signal is depicted on top. As with the timing diagrams in FIGS.2 and 3 described above, FIG. 7 is divided into four periods. The fourperiods of FIG. 7 reflect the same MOSFET operations described abovewith respect to FIGS. 2 and 3. However, the timing diagram of FIG. 7illustrates improvements in slew-rate control compared to the off-stateMOSFET switching illustrated in FIG. 3.

The improved gate voltage signal depicted in in the timing diagram ofFIG. 7 begins with a significantly shortened period 1 when compared tothe conventional load drive circuit of FIG. 3. This corresponds to asignificantly shorted turn-off delay, which provides efficiencyimprovements compared to slew-rate control in conventional load drivecircuits. As expected, the turn-off delay has not been eliminatedentirely. The MOSFET's inherent internal capacitance must be dischargedduring period 1, thus resulting in an unavoidable delay in dropping thegate voltage even after the input voltage to the MOSFET is dropped.

Additional improvements provided by embodiments of the invention arereflected in period 2 of the timing diagram of FIG. 7. Compared to theconventional load drive circuit of FIG. 3, period 2 of FIG. 7illustrates an extended length compared to other periods 1, 3 and 4. Theslower, more controlled increase in drain voltage in FIG. 7 representsimproved control of the drain current and, thus, improved control overthe slew rate of the load drive circuit. As described above, a slowerrate of increase in drain voltage results in less kickback and less EMI.Even though embodiments provide improved slew-rate control, embodimentsdo not adjust changes in the rate of powering the current load to be anyslower than is necessary.

FIG. 7 also illustrates the ability of embodiments to consistently andaccurately control slew rates under a variety of conditions. Asdescribed above, the performance of conventional series resistor systemsdepends significantly on the effect of various operating conditions onthe series resistor and variances in MOSFET characteristics. The timingdiagram of FIG. 7 depicts profiles of gate voltage, V_(GS), and drainvoltage, V_(DS), obtained during simulations run under varying operatingconditions. For example, FIG. 7 reflects simulations with differentMOSFET load switch characteristics, load currents, supply voltages, andoperating temperatures. As seen in FIG. 7, the profiles generated byembodiments under these various conditions showed minor variances. Underthese same varying conditions, conventional systems would exhibit vastlydifferent slew rates during at least period 2.

As stated above, some embodiments may not include both high-side andlow-side drivers, since certain current loads can be driven using asingle phase driver. FIG. 8 depicts an embodiment with dual MOSFET loadswitches controlling power from high-side and low-side drivers. However,in the embodiment of FIG. 8, a digital slew-rate controller 801 ispresent only in the low-side driver. As with the embodiment of FIG. 6,feedback of the voltage on the current load 809 is used to control theslew rate of the MOSFET 805 that powers the current load 809. As before,a feedback capacitor 802 and a resistor 803 are used to set the slewrate. This feedback signal along with the input voltage, V_(IN),provided by the controller are provided as inputs to pairs of logicalgates that interoperate to provide digital adjustments to the slew-ratecontrolled output signal that is used to drive the gate terminal of theMOSFET 805. In FIG. 8, only one of the pair of logical gates isdepicted, NOR gate 804, whose output controls a field-effect transistor807.

The use of feedback information provides other advantages overconventional open-loop slew-rate control circuits, such as the seriesresistor solution described above. Conventional series resistorslew-rate control is dependent on the ability of a resistor, R_(GATE),to moderate the rate of change in the gate voltage. One problem thatresults is that the operational performance of a resistor varies withtemperature. Consequently, as the temperature changes in the system, themagnitude of the slew-rate adjustments made by the series resistor willalso change. Embodiments of the invention that utilize feedback are ableto account for the effects of temperature changes in the system andcompensate for those effects. And, as described above, conventionalsystems are unable to account for variations in the tolerances ofindividual MOSFETs and load currents. The use of feedback again providesthe ability for embodiments to compensate for these variations withoutthe identity of any particular source of variations. Consequently,embodiment utilizing feedback significantly reduce the impact of thesevariables on the ability to accurately and precisely adjust slew rates.The improvement provided by embodiments over conventional systems isillustrated in period 2 of FIG. 7, which shows the uniformity ofslew-rate control that can be provided by embodiments over a range ofoperating conditions.

Another advantage provided by embodiments of the invention is theability to implement slew-rate control using a closed-loop solution thatcan accommodate the switching of both low and high currents. SinceMOSFETs can be used to switch a large range of currents (from a fewampere to hundreds of ampere), power MOSFETs for controlling highcurrents are particularly prevalent in load switch applications used topower inductive current loads, such as motors. In analog closed-loopsolutions, the use of feedback when high power is being switchedrequires the slew-rate control mechanism to be able to maintain fastswitching operations, in order to avoid damage from high currentfeedback. The ability of embodiments to provide fast switching under avariety of operating conditions is again illustrated in the timingdiagram of FIG. 7.

Further advantage can be provided by embodiments that allow theslew-rate control provided by the invention to be programmable. In someembodiments, the slew rate can be programmed through the use ofprogrammable capacitors or resistors in the embodiment of FIG. 6, forexample. For example, binary weighted capacitors can be used forcapacitors 603, 604, 624, and/or 622, in order to allow the user toconnect or disconnect portions of the capacitor to vary its capacitance.Similarly, binary weighted resistors can be used for resistors 603, 607,624 and/or 623 that allow the resistance of these elements to beconfigured. By using configurable components, the slew rate can bechanged.

What is claimed is:
 1. An integrated circuit for driving a first loadswitch wherein the first load switch powers a current load, theintegrated circuit comprising: a first digital slew-rate control unitfor generating first control signals comprising a first digital logicgate receiving a feedback signal from the current load through a seriesconnected first capacitor and first resistor wherein a node between thefirst resistor and the first capacitor is coupled with an input of thefirst digital logic gate, wherein the first digital slew-rate controlunit generates the first control signals based on the feedback signalthat indicates the rate of voltage change on the current load; and afirst driver operated by the first control signals, wherein the firstdriver generates a slew-rate controlled output signal that operates thefirst load switch, wherein the first driver is modulated to generate theslew-rate controlled output signal during state transitions of the firstload switch, wherein the modulation performs discrete slew-rateadjustments.
 2. The integrated circuit of claim 1, wherein the firstload switch is a MOSFET.
 3. The integrated circuit of claim 1, furthercomprising a second driver that generates a constant output, wherein thefirst load switch is operated by the first driver and the second driver,and wherein the second driver generates a constant output during steadystates of the first switch.
 4. The integrated circuit of claim 3,wherein the first driver is a large low impedance driver and the seconddriver is a small current limited driver.
 5. The integrated circuit ofclaim 3, wherein the first load switch is a low-side load switch and theintegrated circuit further comprises: a second digital slew-rate controlunit for generating second control signals comprising a second digitallogic gate receiving the feedback signal from the current load through aseries connected second resistor and second capacitor wherein a nodebetween the second resistor and the second capacitor is coupled with aninput of the second digital logic gate, wherein the second digitalslew-rate control unit receives a second input signal and generates thesecond control signals based on the second input signal and the feedbacksignal that indicates the rate of voltage change on the load; and athird driver operated by the second control signals, wherein the thirddriver generates a slew-rate controlled output signal that operates thesecond load switch, a fourth driver that generates a constant output,wherein the second load switch is operated by the third driver and thefourth driver, and wherein the fourth driver generates a constant outputduring steady states of the second load switch, and wherein the thirddriver is modulated to generate a slew-rate controlled output duringstate transitions of the second load switch, wherein the third andfourth drivers are a high-side drivers.
 6. The integrated circuit ofclaim 5, wherein the series connected second resistor and secondcapacitor are coupled between the load and a power supply.
 7. Theintegrated circuit of claim 1, wherein the series connected firstcapacitor and first resistor are coupled between the load and a powersupply common.
 8. The integrated circuit of claim 7, wherein the firstdigital logic gate is a NOR gate and the first digital slew-rate controlunit further comprises: a NAND gate having a first input receiving thefeedback signal and a second input receiving an input voltage signal,wherein the output of the NAND gate controls a p-channel field-effecttransistor of the first driver; and wherein a first input of the NORgate receives the feedback signal through said series connected firstresistor and first capacitor and a second input receives the inputvoltage signal, wherein the output of the NOR gate controls an n-channelfield-effect transistor of the first driver, wherein the p-channelfield-effect transistor and the n-channel field-effect transistor arecoupled in series and a node between the p-channel field-effecttransistor and the n-channel field-effect transistor provides an outputof the first driver.
 9. The integrated circuit of claim 1, wherein themodulation is performed by a digital output signal of the first digitalslew-rate control unit such that there are periods where a voltage atthe gate of the first load switch does not increase or decrease mixedwith periods where voltage at the gate of the first load switchincreases or decreases.
 10. A slew-rate controlled load driving systemcomprising: a first load switch for powering a current load; a firstdigital slew-rate control unit that generates control signals, whereinthe control signals are generated based on a feedback signal thatindicates the rate of voltage change on the current load, wherein thefeedback signal is fed to the first digital slew-rate control unitthrough a first capacitor and first resistor connected in series betweenthe current load and a power supply common; and a first load drivercircuit operated by the control signals, wherein the first load drivercircuit generates a modulated slew-rate controlled output voltage thatoperates the first load switch during state transitions of the firstload switch, wherein the modulation is performed by a digital outputsignal of the first digital slew-rate control unit which comprisesperiods where no voltage increases or decreases at the gate of the firstload switch are made mixed with periods where voltage increases ordecreases at the gate of the first load switch are made.
 11. The systemof claim 10, wherein the first load switch is a MOSFET.
 12. The systemof claim 11, wherein the first digital slew-rate control unit and thefirst load driver circuit form a slew-rate control driver; and thesystem further comprises: a non-control driver that generates a constantoutput, wherein the load switch is operated by the non-control driverand the slew-rate control driver, and wherein the slew-rate controldriver generates a constant output during steady states of the loadswitch, and wherein the slew-rate control driver is pulse widthmodulated to generate the modulated slew-rate controlled output duringstate transitions of the first load switch.
 13. The system of claim 12,wherein the slew-rate controlled driver is a large low impedance driverand the non-control driver is a small current limited driver.
 14. Thesystem of claim 10, wherein first digital slew-rate control unit and thefirst load driver circuit comprise a low-side driver, and the first loadswitch is a low-side load switch and the system further comprises: asecond digital slew-rate control unit for generating high-side controlsignals, wherein the second digital slew-rate control unit generates thehigh-side control signals based on the feedback signal that indicatesthe rate of voltage change on the current load, wherein the feedbacksignal is fed to the second digital slew-rate control unit through asecond resistor and second capacitor connected in series between thecurrent load and a power supply; a second load driver circuit operatedby the high-side control signals, wherein the second load driver circuitgenerates a slew-rate controlled output voltage that operates the secondload switch, wherein the second load driver circuit and the seconddigital slew-rate control unit comprise a high-side driver.
 15. Thesystem of claim 10, wherein the first digital slew-rate control unitfurther comprises: a NOR gate having a first input coupled with an inputvoltage and a second input coupled with a node between the firstresistor and the first capacitor, wherein an output of the NOR gatecontrols an n-channel field-effect transistor of the first load drivercircuit.
 16. The system of claim 15, wherein the first digital slew-ratecontrol unit further comprises: a NAND gate having a first inputreceiving the feedback signal and a second input receiving the inputvoltage signal, wherein the output of the NAND gate controls a p-channelfield-effect transistor of the first load driver circuit.
 17. A methodfor controlling the slew rate of a first load switch, wherein the firstload switch powers a current load, the method comprising: providing afeedback signal via a first series connected resistor and capacitor to afirst slew-rate control unit; generating, via the first digitalslew-rate control unit, first control signals, wherein the first digitalslew-rate control unit generates the first control signals based on thefeedback signal that indicates the rate of voltage change on the currentload; generating a slew-rate controlled output voltage via a firstdriver, wherein the first driver is operated by the first controlsignals; and controlling the first load switch with the first driver,wherein during state transitions, the first driver is modulated by adigital output signal of the first digital slew-rate control unit suchthat there are periods where a voltage at the gate of the first loadswitch does not increase or decrease mixed with periods where voltage atthe gate of the first load switch increases or decreases.
 18. The methodof claim 17, wherein the first load switch is a MOSFET, and the methodfurther comprises: applying the slew-rate controlled first outputvoltage to the gate terminal of the MOSFET.
 19. The method claim 17,further comprising generating a constant output depending on a firstinput signal using a second driver and controlling the first load switchwith the first and second driver.
 20. The method of claim 19, whereinthe first driver and the second driver are low-side drivers, and thefirst load switch is a low-side load switch, the method furthercomprising: providing the feedback signal via a second series connectedcapacitor and resistor to a second slew-rate control unit; generating,via the second digital slew-rate control unit, second control signals,wherein the second digital slew-rate control unit generates the secondcontrol signals based on the feedback signal that indicates the rate ofvoltage change on the current load; generating a second slew-ratecontrolled output voltage via a third driver operated by the secondsignals, wherein the third driver is a high-side driver; and generatinga constant output by a fourth driver depending on a second input signal,controlling a second load switch by the third driver and the fourthdriver, wherein the third driver is modulated to generate a slew-ratecontrolled output during state transitions of the second load switch.21. The method of claim 20, wherein the second series connected resistorand capacitor are coupled between the current load and a power supply.22. The method of claim 17, wherein the first series connected capacitorand resistor are coupled between the current load and a power supplycommon.
 23. The method of claim 22, the method further comprising:controlling a p-channel field-effect transistor via the output of a NANDgate of the first digital slew-rate control unit, wherein the NAND gatereceives an input voltage signal at a first, terminal and wherein theNAND gate receives the feedback signal at a second terminal; andcontrolling an n-channel field-effect transistor via the output of a NORgate of the first digital slew-rate control unit, wherein the NOR gatereceives the input voltage signal at a first terminal, and wherein theNOR gate receives the feedback signal through said first seriesconnected capacitor and resistor at a second terminal.